Datasheet4U Logo Datasheet4U.com

VB3102M Datasheet - VBsemi

VB3102M Dual N-Channel MOSFET

VB3102M Features

* Halogen-free According to IEC 61249-2-21 Definition

* TrenchFETPower MOSFET

* 100 % Rg and UIS Tested

* Compliant to RoHS Directive 2002/95/EC APPLICATIONS

* CCFL Inverter

* DC/DC Converter

* HDD D1 D2 G1 G2 S1 N-Channel MOSFET S2

VB3102M Datasheet (391.34 KB)

Preview of VB3102M PDF
VB3102M Datasheet Preview Page 2 VB3102M Datasheet Preview Page 3

Datasheet Details

Part number:

VB3102M

Manufacturer:

VBsemi

File Size:

391.34 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30100S-M3 High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VB3102M Dual N-Channel MOSFET VBsemi

VB3102M Distributor