* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Low thermal resistance
* Solder bath temperature 275 °C max
VB30100C-E3 Datasheet (208.57 KB)
VB30100C-E3
208.57 KB
Dual high voltage trench mos barrier schottky rectifier.
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky).
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