* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* AEC-Q101 qualified available: - Automotive ordering code
VB30100CHM3 Datasheet (85.96 KB)
VB30100CHM3
85.96 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com VB30100C-M3, VB30100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V .
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