VB30100S-M3 Datasheet - Vishay

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VB30100S-M3 High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com VB30100S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ®.

VB30100S-M3-Vishay.pdf

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Datasheet Details

Part number:

VB30100S-M3

Manufacturer:

Vishay ↗

File Size:

94.09 KB

Description:

High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance pl

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial

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VB30100S-M3 High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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