VB30100S-M3 - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB30100S-M3
Manufacturer	Vishay ↗
File Size	94.09 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30100S-M3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 VB30100S-M3 Similar Datasheet

Other Datasheets by Vishay

Published: May 4, 2020 |