VB30100S-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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	Vishay Semiconductors	VB30100S-M3-4W	DIODE SCHOTTKY 100V 30A TO263AB	DigiKey	0	8000 units	$0.67	🛒 Buy Now

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Part number:

VB30100S-M3

Manufacturer:

Vishay ↗

File Size:

94.09 KB

Description:

High-voltage trench mos barrier schottky rectifier.
www.vishay.com VB30100S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky R.
ectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VB30100S NC K A HEATSINK.

✔ VB30100S-M3 Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF

✔ VB30100S-M3 Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC con

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VB30100S-M3 High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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