VB30100C Datasheet - Vishay

datasheet Preview Page 1 from Datasheet4u.com

VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product V30100C, VF30100C, VB30100C & VI30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF .

VB30100C_Vishay.pdf

VB30100C Datasheet Preview — Preview of VB30100C PDF

Datasheet Details

Part number:

VB30100C

Manufacturer:

Vishay ↗

File Size:

157.37 KB

Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, c

VB30100C Distributors

📁 Related Datasheet

VB3102M VB325SP VB3407A

📌 All Tags

VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay VB30100C-like datasheet