VBED1101N N-Channel MOSFET

VBsemi

Description

VBED1101N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0084 at VGS = 10 V 100 0.0092 at VGS = 6.0 V 0.0117 at VGS = 4.5 V.

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Datasheet Specifications

Part number: VBED1101N
Manufacturer: VBsemi
File Size: 265.90 KB
Datasheet: VBED1101N-VBsemi.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* Primary Side Switching
* Synchronous Rectification
* DC/AC Inverters
* LED Backlighting 1, 2, 3 Source 4 Gate 5 Drain SSS 12 3 www. VBsemi. com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage

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VBED1101N N-Channel MOSFET VBsemi

VBsemi VBED1101N-like datasheet