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VBED1603 N-Channel MOSFET

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Description

VBED1603 N-Channel 6 0V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0023 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a, e.

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Datasheet Specifications

Part number
VBED1603
Manufacturer
VBsemi
File Size
285.45 KB
Datasheet
VBED1603-VBsemi.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* OR-ing
* Server
* DC/DC ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current I

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