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VBED1606 N-Channel MOSFET

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Description

VBED1606 www.VBsemi.com N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Conf.

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Datasheet Specifications

Part number
VBED1606
Manufacturer
VBsemi
File Size
286.99 KB
Datasheet
VBED1606-VBsemi.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* Package with Low Thermal Resistance
* 100 % Rg and UIS Tested 5 1 234 1, 2, 3 Source 4 Gate 5 Drain 5 D 4 G SSS 12 3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source V

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