* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Server and telecom power supplies
* Switch mode power suppl
VBP112MC100 Datasheet (835.24 KB)
VBP112MC100
VBsemi
835.24 KB
N-channel mosfet.
VBP112MC100 N-Channel 1200V (D-S) SiC Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18 V .
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