VBP104FAS Datasheet, Photodiode, Vishay

VBP104FAS Features

• Photodiode
• Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 4.4 Hi

PDF File Details

Part number:

VBP104FAS

Manufacturer:

Vishay ↗

File Size:

225.71kb

Download:

📄 Datasheet

Description:

Silicon pin photodiode. VBP104FAS and VBP104FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip wit

VBP104FAS Application

• Applications
• High speed detector for infrared radiation
• Infrared remote control and free air data transmissionsystems, e.g. in c

TAGS

VBP104FAS

Vishay

📁 Related Datasheet

VBP104FASR - Silicon PIN Photodiode (Vishay)
.DataSheet.co.kr VBP104FAS, VBP104FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • Package type: surface mount Package form: .

VBP104S - Silicon PIN Photodiode (Vishay)
.DataSheet.co.kr VBP104S, VBP104SR .vishay. Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VBP104S •.

VBP104SR - Silicon PIN Photodiode (Vishay)
.DataSheet.co.kr VBP104S, VBP104SR .vishay. Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VBP104S •.

VBP1104N - N-Channel MOSFET (VBsemi)
VBP1104N N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.035 at VGS = 10 V ID (A) 85 TO-247AC S D .

VBP1106 - N-Channel MOSFET (VBsemi)
VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150 FEATURES • Tr.

VBP112MC100 - N-Channel MOSFET (VBsemi)
VBP112MC100 N-Channel 1200V (D-S) SiC Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18 V .

VBP112MC100-4L - N-Channel MOSFET (VBsemi)
VBP112MC100-4L N-Channel 1200V (D-S) SiC Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18.

VBP112MC60 - N-Channel MOSFET (VBsemi)
VBP112MC60 N-Channel 1200V (D-S) SiC Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18V 10.

VBP112MI75 - 1200V Trench and Fieldstop IGBT (VBsemi)
VBP112MI75 1200V Trench and Fieldstop IGBT .VBsemi. PRODUCT SUMMARY VCE (V) IC (A) 1200 150 (TC=25 ) 75 (TC=100 ) VCE sat (V) 1.8 ICM (A).

VBP15R11S - N-Channel Power MOSFET (VBsemi)
VBM15R11S / VBMB15R11S / VBP15R11S .VBsemi. N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2.