Part number:
VBP112MI75
Manufacturer:
VBsemi
File Size:
3.22 MB
Description:
1200v trench and fieldstop igbt.
VBP112MI75 Features
* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Telecommunications - Server and telecom power supplies
* Ligh
VBP112MI75 Datasheet (3.22 MB)
Datasheet Details
VBP112MI75
VBsemi
3.22 MB
1200v trench and fieldstop igbt.
📁 Related Datasheet
VBP112MC100 N-Channel MOSFET (VBsemi)
VBP112MC100-4L N-Channel MOSFET (VBsemi)
VBP112MC60 N-Channel MOSFET (VBsemi)
VBP1104N N-Channel MOSFET (VBsemi)
VBP1106 N-Channel MOSFET (VBsemi)
VBP104FAS Silicon PIN Photodiode (Vishay)
VBP104FASR Silicon PIN Photodiode (Vishay)
VBP104S Silicon PIN Photodiode (Vishay)
VBP112MI75 Distributor