VBP104S
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Silicon pin photodiode. VBP104S and VBP104SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a
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VBP104FAS - Silicon PIN Photodiode
(Vishay)
.DataSheet.co.kr
VBP104FAS, VBP104FASR
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• • • • • Package type: surface mount Package form: .
VBP104FASR - Silicon PIN Photodiode
(Vishay)
.DataSheet.co.kr
VBP104FAS, VBP104FASR
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• • • • • Package type: surface mount Package form: .
VBP104SR - Silicon PIN Photodiode
(Vishay)
.DataSheet.co.kr
VBP104S, VBP104SR
.vishay.
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
VBP104S
•.
VBP1104N - N-Channel MOSFET
(VBsemi)
VBP1104N
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.035 at VGS = 10 V
ID (A) 85
TO-247AC
S D .
VBP1106 - N-Channel MOSFET
(VBsemi)
VBP1106
N-Channel 100 V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω) 0.006 at VGS = 10 V
ID (A) 150
FEATURES • Tr.
VBP112MC100 - N-Channel MOSFET
(VBsemi)
VBP112MC100 N-Channel 1200V (D-S) SiC Power MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC)
1200 VGS = 18 V
.
VBP112MC100-4L - N-Channel MOSFET
(VBsemi)
VBP112MC100-4L N-Channel 1200V (D-S) SiC Power MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC)
1200 VGS = 18.
VBP112MC60 - N-Channel MOSFET
(VBsemi)
VBP112MC60 N-Channel 1200V (D-S) SiC Power MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC)
1200 VGS = 18V
10.
VBP112MI75 - 1200V Trench and Fieldstop IGBT
(VBsemi)
VBP112MI75 1200V Trench and Fieldstop IGBT
.VBsemi.
PRODUCT SUMMARY
VCE (V) IC (A)
1200 150 (TC=25 ) 75 (TC=100 )
VCE sat (V)
1.8
ICM (A).
VBP15R11S - N-Channel Power MOSFET
(VBsemi)
VBM15R11S / VBMB15R11S / VBP15R11S
.VBsemi.
N-Channel 500V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 2.