VBP165I80 Datasheet - VBsemi

VBP165I80 650V Trench and Fieldstop IGBT

VBP165I80 Features

* Very Low VCEsat

* Low turn-off losses

* High speed switching

* Maximum junction temperature 175°C

* Ultra low gate charge (Qg)

* Avalanche energy rated (UIS) APPLICATIONS

* Telecommunications - Server and telecom power supplies

* Ligh

Datasheet Details

VBP165I80

VBsemi

1.61 MB

650v trench and fieldstop igbt.

📁 Related Datasheet

VBP16I60 600V Trench and Fieldstop IGBT (VBsemi)

VBP16R15S N-Channel MOSFET (VBsemi)

VBP16R20 N-Channel MOSFET (VBsemi)

VBP104FAS Silicon PIN Photodiode (Vishay)

VBP104FASR Silicon PIN Photodiode (Vishay)

VBP104S Silicon PIN Photodiode (Vishay)

VBP104SR Silicon PIN Photodiode (Vishay)

VBP1104N N-Channel MOSFET (VBsemi)

TAGS

VBP165I80 650V Trench and Fieldstop IGBT VBsemi

VBP165I80 Distributor