* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Telecommunications - Server and telecom power supplies
* Ligh
VBP165I80
VBsemi
1.61 MB
650v trench and fieldstop igbt.
VBP165I80 650 V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 650 160 (TC=25 ) 80 (TC=100 ) VCE sat (V) 1.7 ICM (A).
📁 Related Datasheet
VBP16I60 600V Trench and Fieldstop IGBT (VBsemi)
VBP16R15S N-Channel MOSFET (VBsemi)
VBP16R20 N-Channel MOSFET (VBsemi)
VBP104FAS Silicon PIN Photodiode (Vishay)
VBP104FASR Silicon PIN Photodiode (Vishay)
VBP104S Silicon PIN Photodiode (Vishay)
VBP104SR Silicon PIN Photodiode (Vishay)
VBP1104N N-Channel MOSFET (VBsemi)
VBP1106 N-Channel MOSFET (VBsemi)
VBP112MC100 N-Channel MOSFET (VBsemi)
