VBP1106, VBsemi
VBP1106
N-Channel 100 V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω) 0.006 at VGS = 10 V
ID (A) 150
FEATURES • Tr.
VBP112MC100, VBsemi
VBP112MC100 N-Channel 1200V (D-S) SiC Power MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC)
1200 VGS = 18 V
.