Part number:
VSL280N15MS
Manufacturer:
Vanguard Semiconductor
File Size:
376.55 KB
Description:
N-channel advanced power mosfet.
* N-Channel
* Enhancement mode
* low on-resistance @ VGS=4.5 V
* Fast Switching
* Pb-free lead plating; RoHS compliant VSL280N15MS 150V/1.5A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 150 V 230 mΩ 235 mΩ 1.5 A SOT23-3L Part ID Package
VSL280N15MS Datasheet (376.55 KB)
VSL280N15MS
Vanguard Semiconductor
376.55 KB
N-channel advanced power mosfet.
📁 Related Datasheet
VSL045N06MS - N-Channel Advanced Power MOSFET
(Vanguard Semiconductor)
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High Effective Pb-free lead plating; RoHS co.
VSL080N06MS - N-Channel Advanced Power MOSFET
(Vanguard Semiconductor)
Features
N-Channel Enhancement mode Very low on-resistance Fast Switching High Effective Pb-free lead plating; RoHS pliant
VSL080N06MS.
VSL100N10MS - N-Channel Advanced Power MOSFET
(Vanguard Semiconductor)
Features
N-Channel Enhancement mode Very low on-resistance @ VGS=4.5 V Fast Switching Pb-free lead plating; RoHS pliant
VSL100N10MS
100V.
VSLB3940 - High Speed Infrared Emitting Diode
(Vishay Siliconix)
VSLB3940
Vishay Semiconductors
..
High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH
FEATURES
• Package type: .
VSLB3948 - High Speed Infrared Emitting Diode
(Vishay)
.vishay.
VSLB3948
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8488
DESCRIPTION VSLB3948 is a high speed .
VSLB4940 - High Speed Infrared Emitting Diode
(Vishay)
.vishay.
VSLB4940
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8636-2
DESCRIPTION VSLB4940 is a high spee.
VSLB9530S - High Speed Infrared Emitting Diode
(Vishay)
VSLB9530S
.vishay.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: leaded • Package for.
VSLY3943 - High Speed Infrared Emitting Diode
(Vishay)
.vishay.
VSLY3943
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology
94 8636
DESCRIPTION As part of.