VSLB3948 Datasheet, Diode, Vishay

VSLB3948 Features

  • Diode
  • Package type: leaded
  • Package form: T-1, clear epoxy
  • Dimensions: Ø 3 mm
  • High speed
  • High radiant power
  • Low forward voltage

PDF File Details

Part number:

VSLB3948

Manufacturer:

Vishay ↗

File Size:

102.21kb

Download:

📄 Datasheet

Description:

High speed infrared emitting diode. VSLB3948 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package. FEATURES

  • Pa

  • Datasheet Preview: VSLB3948 📥 Download PDF (102.21kb)
    Page 2 of VSLB3948 Page 3 of VSLB3948

    VSLB3948 Application

    • Applications
    • Infrared remote control units PRODUCT SUMMARY COMPONENT VSLB3948 Ie (mW/sr) 65 Note
    • Test conditions see table “B

    TAGS

    VSLB3948
    High
    Speed
    Infrared
    Emitting
    Diode
    Vishay

    📁 Related Datasheet

    VSLB3940 - High Speed Infrared Emitting Diode (Vishay Siliconix)
    VSLB3940 Vishay Semiconductors .. High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH FEATURES • Package type: .

    VSLB4940 - High Speed Infrared Emitting Diode (Vishay)
    .vishay. VSLB4940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8636-2 DESCRIPTION VSLB4940 is a high spee.

    VSLB9530S - High Speed Infrared Emitting Diode (Vishay)
    VSLB9530S .vishay. Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package for.

    VSL045N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
    Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS co.

    VSL080N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
    Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  High Effective  Pb-free lead plating; RoHS pliant VSL080N06MS.

    VSL100N10MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
    Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS pliant VSL100N10MS 100V.

    VSL280N15MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
    Features  N-Channel  Enhancement mode  low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS pliant VSL280N15MS 150V/1.5A.

    VSLY3943 - High Speed Infrared Emitting Diode (Vishay)
    .vishay. VSLY3943 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology 94 8636 DESCRIPTION As part of.

    VSLY5850 - High Speed Infrared Emitting Diode (Vishay)
    .vishay. VSLY5850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology 22114 DESCRIPTION As part of t.

    VS-100BGQ015 - Schottky Rectifier (Vishay)
    .vishay. VS-100BGQ015 Vishay Semiconductors Schottky Rectifier, 100 A Cathode Anode PowerTab® PRODUCT SUMMARY Package IF(AV) VR VF at IF IR.

    Stock and price

    part
    Vishay Semiconductors
    EMITTER IR 940NM 100MA RADIAL
    DigiKey
    VSLB3948
    4880 In Stock
    Qty : 25000 units
    Unit Price : $0.18
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts