VSLB9530S Datasheet (Vishay) - High Speed Infrared Emitting Diode

VSLB9530S, High Speed Infrared Emitting Diode

VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.

It is molded in a clear high power TELUX package with an oval lens resulting in angle of half intensities in vertical direction of ± 18° and in horizontal direction

VSLB9530S Features

* Package type: leaded

* Package form: TELUX

* Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6

* Peak wavelength: λp = 940 nm

* High reliability

* High radiant power

* High radiant intensity

* Angle of half intensity, vertical: ϕv = ± 1