VSLB9530S - High Speed Infrared Emitting Diode

Vishay

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Datasheet Details

Part number	VSLB9530S
Manufacturer	Vishay ↗
File Size	338.67 KB
Description	High Speed Infrared Emitting Diode
Datasheet	VSLB9530S_Vishay.pdf

VSLB9530S Product details

Description

VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. Good spectral matching with Si photodetectors Compatible with wave solder processes according to CECC 00802 Material categorization: For definitions of compli

Features

Package type: leaded.
Package form: TELUX.
Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6.
Peak wavelength: λp = 940 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity, vertical: ϕv = ± 18°.
Angle of half intensity, horizontal: ϕh = ± 36° 19232.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.

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Published: Nov 11, 2013 |