SI8900EDB - Bi-Directional N-Channel MOSFET
SI8900EDB Features
* PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.024 @ VGS = 4.5 V 20 0.026 @ VGS = 3.7 V 0.034 @ VGS = 2.5 V 0.040 @ VGS = 1.8 V Bump Side View IS1S2 (A) 7 6.8 5.0 5.5 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Prof
