Datasheet Specifications
- Part number
- SI8902EDB
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 58.47 KB
- Datasheet
- SI8902EDB_VishaySiliconix.pdf
- Description
- Bi-Directional N-Channel MOSFET
Description
Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET .
Features
* PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.045 @ VGS = 4.5 V 20 0.048 @ VGS = 3.7 V 0.057 @ VGS = 2.5 V 0.072 @ VGS = 1.8 V IS1S2 (A) 5.0 4.8 4.4 3.9 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area, Profile (0.65 mmApplications
* D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOTt Bump Side View Backside View S2 5 4 S2 Pin 1 Identifier G1 4 kW 8902E xxx G2 6 3 G1 Device Marking: 8902E = P/N Code xxx = Date/Lot Traceability Code G2 4 kW S1 1 2 S1 S2 N-Channel ABSOSI8902EDB Distributors
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