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SI8901EDB Datasheet - Vishay Siliconix

SI8901EDB Bi-Directional P-Channel MOSFET

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit mode is extracted and optimized over the *55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias n.

SI8901EDB Datasheet

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Datasheet Details

Part number:

SI8901EDB

Manufacturer:

Vishay ↗ Siliconix

File Size:

247.05 KB

Description:

Bi-directional p-channel mosfet.

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SI8901EDB Bi-Directional P-Channel MOSFET Vishay Siliconix

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