SI8901EDB

Bi-Directional P-Channel MOSFET

Vishay Siliconix

SI8901EDB General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit mode is extracted and optimized over the

*55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias n.

SI8901EDB Datasheet (247.05 KB)

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Datasheet Details

Part number:

SI8901EDB

Manufacturer:

Vishay ↗ Siliconix

File Size:

247.05 KB

Description:

Bi-directional p-channel mosfet.
www.DataSheet4U.com SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET CHARACTERISTICS

* P-Channel Ver.

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SI8901EDB Bi-Directional P-Channel MOSFET Vishay Siliconix

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SI8901EDB General Description

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