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SI8902AEDB N-channel MOSFET

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Description

www.vishay.com Si8902AEDB Vishay Siliconix N-Channel 24 V (D-S) MOSFET PRODUCT SUMMARY VS1S2 (V) 24 RS1S2 (Ω) Max.0.028 at VGS = 4.5 V 0.029 at .

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Features

* TrenchFET® power MOSFET
* Small 2.4 mm x 1.6 mm outline
* Thin 0.6 mm max. height
* Typical ESD protection 5000 V (HBM)

Applications

* Battery protection switch
* Bi-directional switch S1 G1 R R G2 Marking Code: 8902AE Ordering Information: Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free) N-Channel S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Source 1-to-Source 2 Vo

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