SiHFI830G Datasheet - Vishay Siliconix

SiHFI830G Power MOSFET

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

SiHFI830G Features

* 500 1.5

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available RoHS

* COMPLIANT TO-220 FULLPAK

SiHFI830G_VishaySiliconix.pdf