SiHFI830G Power MOSFET

Vishay Siliconix

Description

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U..
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFI830G
Manufacturer: Vishay ↗ Siliconix
File Size: 1.30 MB
Datasheet: SiHFI830G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 500 1.5
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Available RoHS
* COMPLIANT TO-220 FULLPAK

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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SiHFI830G Power MOSFET Vishay Siliconix

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