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SiHFI9Z34G Power MOSFET

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Description

www.vishay.com IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.(nC) Qgs (nC) Qgd (nC) Configuratio.
Third generation power MOSFETs from Vishay provide the desig.

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Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available
* Sink to lead creepage distance = 4.8 mm
* P-channel Available
* 175 °C operating temperature
* Dynamic dV/dt rating
* Low thermal resistance

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