* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available
* Sink to lead creepage distance = 4.8 mm
* P-channel Available
* 175 °C operating temperature
* Dynamic dV/dt rating
* Low thermal resistance
SiHFI9Z34G Datasheet (771.22 KB)
SiHFI9Z34G
Vishay ↗ Siliconix
771.22 KB
Power mosfet.
www.vishay.com
IRFI9Z34G, SiHFI9Z34G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuratio.
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