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TSAL6200 High Power Infrared Emitting Diode

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Description

www.vishay.com TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8389 .
TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-g.

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Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Peak wavelength: λp = 940 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 17°
* Low forward voltage

Applications

* Infrared remote control units with high power requirements
* Free air transmission systems
* Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 72 Note
* Test conditions see table “Basic Characteristics” ϕ (deg)

TSAL6200 Distributors

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