V60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

www.vishay.com V60100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS .

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Datasheet Specifications

Part number: V60100C
Manufacturer: Vishay ↗ Siliconix
File Size: 125.12 KB
Datasheet: V60100C_VishaySiliconix.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPICAL APPLI

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A TJ max. 0.66 V 150 °C Package TO-220AB Diode variation Common

V60100C Distributors

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V60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

Vishay Siliconix V60100C-like datasheet