V60100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Datasheet Details

Part number	V60100C
Manufacturer	Vishay Siliconix
File Size	125.12 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60100C_VishaySiliconix.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 V60100C Similar Datasheet

V60100C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60100PW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60170G-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60170PW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V600 - RFID System Applications (Omron)
V600-HA - Intelligent Flag I/II (Omron)

Other Datasheets by Vishay Siliconix

Published: Feb 2, 2012 |