Datasheet Details
- Part number
- V60170G-M3
- Manufacturer
- Vishay ↗
- File Size
- 123.56 KB
- Datasheet
- V60170G-M3-Vishay.pdf
- Description
- Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60170G-M3 Description
www.vishay.com V60170G-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TM.
V60170G-M3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance
please see www. vishay. com/doc?99912
TYPICAL APPLI
V60170G-M3 Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Ma
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