Datasheet4U Logo Datasheet4U.com

V60120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

📥 Download Datasheet  Datasheet Preview Page 1

Description

www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = .

📥 Download Datasheet

Preview of V60120C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
V60120C
Manufacturer
Vishay ↗
File Size
150.11 KB
Datasheet
V60120C_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB and D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade

V60120C Distributors

📁 Related Datasheet

📌 All Tags

Vishay V60120C-like datasheet