Datasheet Details
Part number:
V60120C
Manufacturer:
File Size:
150.11 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
Datasheet Details
Part number:
V60120C
Manufacturer:
File Size:
150.11 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
V60120C, Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
Package 2 x 30 A 120 V 300 A 0.71 V 150 °C TO-220AB, D2PAK (TO-263AB) Circuit configurati
V60120C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
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