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V60100C-M3 Datasheet - Vishay

V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

V60100C-M3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLI

V60100C-M3 Datasheet (120.19 KB)

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Datasheet Details

Part number:

V60100C-M3

Manufacturer:

Vishay ↗

File Size:

120.19 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

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V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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