V60100C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V60100C-M3
Manufacturer	Vishay
File Size	120.19 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60100C-M3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Aug 23, 2018 |