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V60170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60170PW Description

www.vishay.com V60170PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A TMB.

V60170PW Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN

V60170PW Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 170 V 260 A 0.65 V 175 °C MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V

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Datasheet Details

Part number
V60170PW
Manufacturer
Vishay ↗
File Size
86.73 KB
Datasheet
V60170PW-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay V60170PW-like datasheet