Datasheet Details
- Part number
- V60200PG
- Manufacturer
- Vishay ↗
- File Size
- 161.58 KB
- Datasheet
- V60200PG_Vishay.pdf
- Description
- Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V60200PG Description
www.DataSheet.co.kr New Product V60200PG Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V.
V60200PG Features
* TMBS®
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
3 2 1
* Low thermal resistance
* Solder dip 260 °C, 40 s
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICAT
V60200PG Applications
* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 200 V 300 A 0.73 V 150 °C
MECHANI
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