* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halogen-free accor
V60200PGW Datasheet (141.15 KB)
V60200PGW
141.15 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V60200PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 .
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