V60200PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V60200PGW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 .

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Datasheet Specifications

Part number: V60200PGW
Manufacturer: Vishay ↗
File Size: 141.15 KB
Datasheet: V60200PGW_Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halogen-free accor

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS at L = 60 mH VF at IF = 30 A TJ max. 2 x 30 A 200 V 300 A 150 mJ 0.77 V 150 °C MECHANICAL DATA Case: T

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V60200PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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