V60200PGW Datasheet - Vishay

V60200PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60200PGW Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

* Halogen-free accor

Datasheet Details

V60200PGW

141.15 KB

Dual high-voltage trench mos barrier schottky rectifier.

V60200PGW Distributor

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