* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN
V60100PW
87.42 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A TMB.
📁 Related Datasheet
V60100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V60100C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60170G-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V600 RFID System Applications (Omron)
V600-HA Intelligent Flag I/II (Omron)
V600-HA Intelligent Flag I (Omron)
V600-HAM81 Intelligent Flag I/II (Omron)
