IRF614 Datasheet, Mosfet, Vishay

IRF614 Features

• Mosfet
• Dynamic dV/dt rating
• Repetitive avalanche rated Available
• Fast switching
• Ease of paralleling Available
• Simple drive requirements

PDF File Details

Part number:

IRF614

Manufacturer:

Vishay ↗

File Size:

153.19kb

Download:

📄 Datasheet

Description:

Power mosfet. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design

IRF614 Application

• Applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wi

TAGS

IRF614

Vishay

📁 Related Datasheet

IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for .

IRF610 - N-Channel Power MOSFET (Intersil Corporation)
IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF610 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF610 - Power MOSFET (Vishay)
Power MOSFET IRF610, SiHF610 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8..

IRF6100 - HEXFET Power MOSFET (International Rectifier)
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Avail.

IRF6100PBF - HEXFET Power MOSFET (International Rectifier)
PD - 96012B IRF6100PbF HEXFET® Power MOSFET l l l l l l l Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Foo.

IRF610A - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance.

IRF610A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRF610B - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ.

IRF610L - Power MOSFET (Vishay)
.vishay. IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .