IRFD320
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Power mosfet. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design
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📁 Related Datasheet
IRFD320 - N-Channel Power MOSFET
(Intersil Corporation)
IRFD320
Data Sheet July 1999 File Number
2325.4
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field.
IRFD320 - Power MOSFET
(International Rectifier)
HEXFET® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple D.
IRFD320 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~
FIELD EFFECT PO'NER TRANSISTOR
IRFD320,321 D82CQ2.Q1
0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0
This series of N-Channel Enhancement-mode Power.
IRFD321 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~
FIELD EFFECT PO'NER TRANSISTOR
IRFD320,321 D82CQ2.Q1
0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0
This series of N-Channel Enhancement-mode Power.
IRFD310 - N-Channel Power MOSFET
(Intersil Corporation)
IRFD310
Data Sheet July 1999 File Number
2324.4
0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate power.
IRFD310 - Power MOSFET
(International Rectifier)
HEXFET® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple D.
IRFD010 - Transistor
(International Rectifier)
.
IRFD012 - Transistor
(International Rectifier)
.
IRFD014 - Power MOSFET
(International Rectifier)
.
IRFD014 - Power MOSFET
(Vishay)
Power MOSFET
IRFD014, SiHFD014
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
1.