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SIR640ADP N-Channel MOSFET

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Description

www.vishay.com SiR640ADP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) MAX.0.0020 at VGS = 10 V 0.0025 at .

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Features

* TrenchFET® power MOSFET
* Low Qg for high efficiency
* 100 % Rg and UIS tested

Applications

* Synchronous rectification
* DC/DC converter
* DC/AC inverter G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t

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