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SIR662DP N-Channel MOSFET

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Description

www.vishay.com SiR662DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.0027 at VGS = 10 V 0.0033 at VGS = .

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Datasheet Specifications

Part number
SIR662DP
Manufacturer
Vishay ↗
File Size
381.00 KB
Datasheet
SIR662DP-Vishay.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested
* Low Qg for high efficiency

Applications

* Primary side switch
* POL
* Synchronous rectifier
* DC/DC converter
* Amusement system
* Industrial
* LED backlighting D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Vol

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