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SiR688DP N-Channel MOSFET

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Description

N-Channel 60 V (D-S) MOSFET SiR688DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max.0.0035 at VGS = 10 V 0.0045 at VGS = 6 V 0.0060 .

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Datasheet Specifications

Part number
SiR688DP
Manufacturer
Vishay ↗
File Size
323.18 KB
Datasheet
SiR688DP-Vishay.pdf
Description
N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Low Qg for High Efficiency

Applications

* Primary Side Switch
* Synchronous Rectifier
* DC/DC Converter
* DC/AC Inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C

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