SiR688DP Datasheet - Vishay

SiR688DP, N-Channel MOSFET

N-Channel 60 V (D-S) MOSFET SiR688DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max.0.0035 at VGS = 10 V 0.0045 at VGS = 6 V 0.0060 .

Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Low Qg for High Efficiency

Applications

* Primary Side Switch
* Synchronous Rectifier
* DC/DC Converter
* DC/AC Inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C

SiR688DP-Vishay.pdf