* TrenchFET® Gen IV power MOSFET
* 100 % Rg and UIS tested
* Qgd / Qgs ratio < 1 optimizes switching characteristics
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Synchronous rectification
SiR638DP Datasheet (407.98 KB)
SiR638DP
407.98 KB
N-channel mosfet.
www.vishay.com SiR638DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00088 at VGS = 10 V 0.00116 .
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