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SIR826ADP N-Channel MOSFET

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Description

www.vishay.com SiR826ADP Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max.0.0055 at VGS = 10 V 0.0059 at .

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Features

* TrenchFET® power MOSFET
* 100 % Rg and UIS tested

Applications

* Primary side switching
* Synchronous rectification
* DC/AC inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Cur

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