* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
SUP60030E Datasheet (147.92 KB)
SUP60030E
147.92 KB
N-channel 80 v (d-s) mosfet.
www.vishay.com SUP60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0034 at VGS = 10 V 80 0.0036 at.
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