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SUP60030E N-Channel 80 V (D-S) MOSFET

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Description

www.vishay.com SUP60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX.0.0034 at VGS = 10 V 80 0.0036 at.

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Datasheet Specifications

Part number
SUP60030E
Manufacturer
Vishay ↗
File Size
147.92 KB
Datasheet
SUP60030E-Vishay.pdf
Description
N-Channel 80 V (D-S) MOSFET

Features

* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested

Applications

* Power supply - Secondary synchronous rectification
* DC/DC converter
* Power tools
* Motor drive switch
* DC/AC inverter
* Battery management G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL

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