SUP60030E N-Channel 80 V (D-S) MOSFET

Vishay

SUP60030E Description

www.vishay.com SUP60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX.0.0034 at VGS = 10 V 80 0.0036 at.

SUP60030E Features

* TrenchFET® power MOSFET
* Maximum 175 °C junction temperature
* Very low Qgd reduces power loss from passing through Vplateau
* 100 % Rg and UIS tested

SUP60030E Applications

* Power supply - Secondary synchronous rectification
* DC/DC converter
* Power tools
* Motor drive switch
* DC/AC inverter
* Battery management G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL

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Datasheet Details

Part number: SUP60030E
Manufacturer: Vishay ↗
File Size: 147.92 KB
Datasheet: SUP60030E-Vishay.pdf
Description: N-Channel 80 V (D-S) MOSFET

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N-Channel D-S MOSFET Vishay

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