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SUP60N02-4m5P N-Channel MOSFET

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Description

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0045 at VGS = 10 V 20 0.0065 at VGS =.

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Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* 100 % Rg Tested

Applications

* OR-ing D RoHS COMPLIANT DRAIN connected to TAB G GD S Top View Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 1

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