Si2307CDS Datasheet - Vishay

Si2307CDS, P-Channel 30-V (D-S) MOSFET

www.vishay.com Si2307CDS Vishay Siliconix P-Channel 30 V (D-S) MOSFET SOT-23 (TO-236) D 3

Features

* TrenchFET® power MOSFET
* Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Marking code: N7 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max.
() at VGS = -10 V RDS(on) max.
() at VGS = -4.5 V Qg typ.
(nC) ID (A) a, b Configuration ORDE

Applications

* Load switch for portable devices S G D P-Channel MOSFET SOT-23 Si2307CDS-T1-E3 Si2307CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a, b Pulsed drain current (10 μs

Si2307CDS-Vishay.pdf