Si8823EDB P-Channel 20 V (D-S) MOSFET

Vishay

Description

www.vishay.com Si8823EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Sid.

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Datasheet Specifications

Part number: Si8823EDB
Manufacturer: Vishay ↗
File Size: 142.54 KB
Datasheet: Si8823EDB-Vishay.pdf
Description: P-Channel 20 V (D-S) MOSFET

Features

* TrenchFET® Gen III p-channel power MOSFET
* Compact 0.8 mm x 0.8 mm outline area
* Low 0.4 mm max. profile
* RDS(on) rating at VGS = -1.5 V
* Typical ESD protection: 1900 V HBM
* Material categorization: for definitions of compliance please see www. v

Applications

* Load switch
* Power management in batteryoperated, mobile, and wearable devices G S P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT Si8823EDB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER S

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Si8823EDB P-Channel D-S MOSFET Vishay

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