* TrenchFET® Gen III p-channel power MOSFET
* Compact 0.8 mm x 0.8 mm outline area
* Low 0.4 mm max. profile
* RDS(on) rating at VGS = -1.5 V
* Typical ESD protection: 1900 V HBM
* Material categorization: for definitions of compliance please see www.v
Si8823EDB Datasheet (142.54 KB)
Si8823EDB
142.54 KB
P-channel 20 v (d-s) mosfet.
www.vishay.com Si8823EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Sid.
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