Si8824EDB N-Channel 20V (D-S) MOSFET

Vishay

Description

www.vishay.com Si8824EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX.0.075 at VGS = 4.5 V 0.082 at VG.

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Datasheet Specifications

Part number: Si8824EDB
Manufacturer: Vishay ↗
File Size: 154.48 KB
Datasheet: Si8824EDB-Vishay.pdf
Description: N-Channel 20V (D-S) MOSFET

Features

* TrenchFET® power MOSFET
* Ultra small 0.8 mm x 0.8 mm outline
* Ultra thin 0.357 mm height
* Typical ESD protection 2000 V (HBM)

Applications

* Ultraportable and wearable devices
* Load switch with low voltage drop
* Load switch for 1.2 V, 1.5 V, and 1.8 V power lines G
* Small signal and high speed switching D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAME

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Si8824EDB N-Channel 20V D-S MOSFET Vishay

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