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Si8810EDB N-Channel MOSFET

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Description

Si8810EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET .

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Features

* PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.072 at VGS = 4.5 V 20 0.079 at VGS = 2.5 V 0.092 at VGS = 1.8 V 0.125 at VGS = 1.5 V MICRO FOOT Bump Side View Backside View ID (A)a 2.9 2.8 2.6 2.2 Qg (Typ. ) 3 nC
* TrenchFET® Power MOSFET Ultra Small 0.

Applications

* Portable Devices such as Cell Phones, Smart Phones and Tablet PCs - Load Switch - Small Signal Switch - High Speed Switching D S 2 G 1 xxx AJ G S 3 D 4 Device Marking: xxx = Date/Lot Traceability Code AJ Ordering Information: Si8810EDB-T2-E1 (Lead (Pb)-free and Halogen-free) S N-Ch

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