SI8816EDB N-Channel MOSFET

Vishay

Description

www.vishay.com Si8816EDB Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max.0.109 at VGS = 10 V 30 0.116 at .

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Datasheet Specifications

Part number: SI8816EDB
Manufacturer: Vishay ↗
File Size: 149.59 KB
Datasheet: SI8816EDB-Vishay.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® power MOSFET
* Ultra small 0.8 mm x 0.8 mm outline
* Ultra thin 0.4 mm max. height
* Typical ESD protection 1700 V (HBM)

Applications

* Load switch
* OVP switch
* High speed switching
* DC/DC converters
* For smart phones, tablet PCs, and mobile computing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-So

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SI8816EDB N-Channel MOSFET Vishay

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