* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Ultra Small 0.8 mm x 0.8 mm Outline
* Ultra Thin 0.357 mm Height
* Typical ESD Protection 1500 V
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS MICRO FOOT Bump Si
Si8800EDB Datasheet (164.35 KB)
Si8800EDB
Vishay ↗ Siliconix
164.35 KB
N-channel 20 v (d-s) mosfet.
New Product
www.DataSheet4U.com Si8800EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.080 at VGS = 4.5 V 20 0.
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