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SI8417DB - P-Channel MOSFET

SI8417DB Description

P-Channel 1.8 V (G-S) MOSFET Si8417DB Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.021 at VGS = - 4.5 V - 12 0.026 at VGS = - 2.5 V .

SI8417DB Features

* Halogen-free according to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Ultra Small MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area

SI8417DB Applications

* PA Switch
* Battery Switch
* Load Switch S 1D D2 G Device Marking: 8417 xxx = Date/Lot Traceability Code Ordering Information: Si8417DB-T2-E1 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit U

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Vishay Siliconix SI8417DB-like datasheet