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SI8415DB P-Channel MOSFET

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Description

P-Channel 12 V (D-S) MOSFET Si8415DB Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) () 0.037 at VGS = - 4.5 V 0.046 at VGS = - 2.5 V 0.060.

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Features

* TrenchFET® Power MOSFET
* MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
* Ultra-Low On-Resistance
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 APPLICATIO

Applications

* Load Switch, Charger Switch, and S PA Switch for Portable Devices G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 12 V VGS ±8 Continuous Drain Current (

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