SiR432DP N-Channel 100-V (D-S) MOSFET

Vishay

Description

N-Channel 100-V (D-S) MOSFET SiR432DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0306 at VGS = 10 V 0.0327 at VGS = 7.5 V ID (A)a.

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Datasheet Specifications

Part number: SiR432DP
Manufacturer: Vishay ↗
File Size: 118.82 KB
Datasheet: SiR432DP-Vishay.pdf
Description: N-Channel 100-V (D-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested

Applications

* Primary Side Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-

SiR432DP Distributors

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SiR432DP N-Channel 100-V D-S MOSFET Vishay

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